Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots

Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

We report on a photoreflectance investigation in the 0.8–1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. We observed clear and well-resolved structures, which we attribute to the optical response of different QD families. The dependence of the ground state transition en...

GaAs quantum dots

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the “linear combination of bulk bands” method. We present a detailed comparison with experiment, including quantities such as the single particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole and electron hole C...

study of cohesive devices in the textbook of english for the students of apsychology by rastegarpour

this study investigates the cohesive devices used in the textbook of english for the students of psychology. the research questions and hypotheses in the present study are based on what frequency and distribution of grammatical and lexical cohesive devices are. then, to answer the questions all grammatical and lexical cohesive devices in reading comprehension passages from 6 units of 21units th...

Coherence and Spin in GaAs Quantum Dots

This thesis describes a number of experiments performed in quantum dots as well as 2D systems fabricated in GaAs/AlGaAs 2D electron gases. The focus of the studies is set on spin, coherence and interaction effects of electrons in mesoscopic structures. Experiments investigating the rich physics of spin-orbit coupling in confined structures in presence of magnetic fields both perpendicular and p...

Dephasing in InAs/GaAs quantum dots